Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator | Crystal Growth & Design
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
a) Schematic and dimensions of GaSb growth on V-grooved Si using an... | Download Scientific Diagram
Growth of III–V semiconductors and lasers on silicon substrates by MOCVD - ScienceDirect
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | Journal of Materials Science: Materials in Electronics
Electronics | Free Full-Text | Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Schematic process flow for (a–d) silicon (100) substrate preparation... | Download Scientific Diagram
III–V material integration, IBM Research Zurich
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | Journal of Materials Science: Materials in Electronics
Selective Area Growth - an overview | ScienceDirect Topics
Photonics | Free Full-Text | Recent Progress in III–V Photodetectors Grown on Silicon
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Materials | Free Full-Text | Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate
Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers | ACS Nano
Selective Area Growth - an overview | ScienceDirect Topics
Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate | Journal of Materials Research
Selective Area Growth - an overview | ScienceDirect Topics
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
